TOKYO, Jan 28 (Bernama) -- Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage¹ (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications and high-capacity storage needs, the new devices are powered by Kioxia’s 8th generation BiCS FLASH™ 3D flash memory technology.
QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.
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