Toshiba Unveils 1200V Trench-gate SiC MOSFET For AI Data Centres

KUALA LUMPUR, May 21 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has started shipping test samples of “TW007D120E”, a 1200-volt (V) trench-gate silicon carbide (SiC) MOSFET designed for power supply systems in next-generation artificial intelligence (AI) data centres.

According to Toshiba in a statement, the rapid expansion of generative AI, alongside the growing adoption of high-power AI servers and 800V high-voltage direct current (HVDC) architectures, is driving demand for higher-efficiency power supply systems.

The company said the newly developed TW007D120E will help reduce power consumption while improving the miniaturisation and efficiency of power supply systems for next-generation AI data centres.

Built around Toshiba’s proprietary trench-gate structure, the product achieves industry-leading low On-resistance per unit area, reducing conduction loss while simultaneously lowering switching loss.

Compared with Toshiba’s existing products, the device is expected to support highly efficient operation and reduced heat generation in data centre power systems, contributing to improved overall system efficiency.

The product is housed in a QDPAK package supporting top-side cooling, enabling higher power density implementation and enhanced thermal performance in the power stage.

Toshiba plans to begin mass production of the TW007D120E during fiscal year 2026 and expand the product lineup to include development for automotive applications.

The product is based on results obtained from JPNP21029, a project subsidised by Japan’s New Energy and Industrial Technology Development Organization.

-- BERNAMA