Toshiba Unveils Compact 650V SiC MOSFETs For High-Efficiency Power Equipment

KUALA LUMPUR, May 20 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched four 650-volt (V) silicon carbide (SiC) MOSFETs, equipped with its latest third-generation SiC MOSFET chips and housed in a compact DFN8x8 package.

Suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators, volume shipments of the four devices, “TW031V65C”, “TW054V65C”, “TW092V65C” and “TW123V65C”, have started.

The new products are the first third-generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by over 90 per cent compared to lead-inserted packages and improves equipment power density.

According to Toshiba in a statement, surface mounting also allows use of parasitic impedance components smaller than those of lead-inserted packages, reducing switching losses.

The DFN8x8 is a four-pin package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance.

In the case of TW054V65C, it reduces turn-on loss by approximately 55 per cent and turn-off loss by approximately 25 per cent compared to current Toshiba products, helping to reduce power loss in equipment.

A supplier of advanced semiconductor and storage solutions, Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

-- BERNAMA

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