Kioxia’s UFS Devices Feature 8th-gen BiCS Flash For Enhanced Speed, Efficiency

KUALA LUMPUR, July 9 (Bernama) -- Kioxia Corporation, a world leader in memory solutions, announced it has begun sampling its latest Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in high-performance storage.

Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device artificial intelligence (AI), the new devices offer improved performance with greater power efficiency in a small BGA package.

The new UFS 4.1 lineup integrates Kioxia’s eighth-generation BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package, according to Kioxia in a statement.

This generation introduces CMOS directly Bonded to Array (CBA) technology, a breakthrough architecture that significantly improves performance, density, and energy efficiency by directly bonding CMOS circuitry to the memory array.

The new devices are available in 256 gigabytes (GB), 512 GB and one terabyte (TB), offering significant improvements over the previous generation. They deliver up to 30 per cent faster random write performance and 45 per cent faster random read speeds.

Power efficiency has also been enhanced, with write operations improved by up to 20 per cent and read operations by 15 per cent. Features such as Host Initiated Defragmentation ensure sustained performance during intensive tasks, while WriteBooster buffer resizing enables more flexible and optimised data throughput.

Additionally, the one TB model features a reduced package height, allowing for more compact integration in mobile devices.

These features position Kioxia’s UFS 4.1 memory as a key enabler for premium mobile user experiences—supporting faster downloads, smoother multitasking, and more efficient AI processing.

-- BERNAMA