Kioxia Sampling UFS Ver. 4.1 Embedded Flash Memory Devices

TOKYO, July 9 (Bernama) -- Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage(²) (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in high-performance storage. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices offer improved performance with greater power efficiency(³), in a small BGA package.

UFS Ver. 4.1 devices from Kioxia integrate the company’s innovative BiCS FLASH™ 3D flash memory and a controller in a JEDEC-standard package. These new UFS devices are built with Kioxia’s 8th generation BiCS FLASH™ 3D flash memory(¹). This generation introduces CBA (CMOS directly Bonded to Array) technology—an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables major gains in power efficiency, performance and density.